smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 h fe classification marking rank l h hfe 120 200 200 350 j3y features collector current: i c =0.5a absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v collector current -continuous i c 0.5 a collector dissipation p c 0.3 w junction temperature t j 150 storage temperature t stg -55to150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = 100 a , i e =0 40 v collector-emitter breakdown voltage v ceo i c =1ma,i b =0 25 v emitter-base breakdown voltage v ebo i e = 100 a , i c =0 5 v collector-base cut-off current i cbo v cb =40v,i e =0 0.1 a collector-emitter cut-off current i ceo v ce =20v,i b =0 0.1 a emitter-base cut-off current i ebo v eb =5v,i c =0 0.1 a v ce =1v,i c = 50 ma 120 350 v ce =1v,i c = 500 ma 50 collector-emitter saturation voltage v ce(sat) i c = 500 ma , i b =50ma 0.6 v base-emitter saturation voltage v be(sat) i c = 500 ma , i b =50ma 1.2 v transition frequency f t v ce =6v,i c = 20 ma , f = 30 mhz 150 mhz dc current gain h fe KST8050S smd type transistors smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors typical characteristics fig.1 static characteristic fig.2 dc current gain fig.3 base-emitter saturation voltage callector-emitter saturation voltage fig.4 current gain bandwidth product smd type transistors KST8050S smd type transistors smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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